The YH13s omnipolar Hall effect sensor IC is fabricated from mixed signalCMOS technology. It incorporates advanced chopper-stabilization techniques toprovide accurate and stable magnetic switch points.The circuit design provides an internally controlled clocking mechanism tocycle power to the Hall element and analog signal processing circuits. This servesto place the high current-consuming portions of the circuit into a “Sleep” mode.Periodically the device is “Awakened” by this internal logic and the magnetic fluxfrom the Hall element is evaluated against the predefined thresholds. If theflux density is above or below the Bop/Brp thresholds then the output transistor isdriven to change states accordingly. While in the “Sleep” cycle the output transistoris latched in its previous state. The design has been optimized for service inapplications requiring extended operating lifetime in battery powered systems.The output transistor of the will be latched on in the presence of asufficiently strong South or North magnetic field facing the marked side of thepackage. The output YH13s will be latched off in the absence of a magnetic field.Features：· 2.2 V to 6.0 V battery operation· High sensitivity and high stability of the magnetic switching points· High resistance to mechanical stress· Digital output signal· Switching for both poles of a magnet (omnipolar)